mitsubishi semiconductors M54563WP 8-unit 500ma source type darlington transistor array with clamp diode jul-2011 pin configuration description M54563WP is eight-circuit output-sourcing darlington transistor array. the circuits are made of pnp and npn transistors. this semiconductor integrated circuit performs high current driving with extremely low input- current supply. features high breakdown voltage (bv ceo > 50v) high-current driving (io(max) = ?500ma) with clamping diodes driving available with pmos ic output of 6 ~ 16v or with ttl output output current-sourcing type applications drives of relays, printers, leds, fluorescent display tubes and lamps, and interfaces between mos-bipolar logic systems and relays, solenoids, or small motors function the M54563WP each have eight circuits, which are made of input inverters and current-sourcing outputs. the outputs are made of pnp transistors and npn darlington transistors. the pnp transistor base current is constant. a clamping diode is provided between each output and gnd. v s and gnd are used commonly among the eight circuits. the inputs have resistance of 3k , and voltage of up to 10v is applicable. output current is 500 ma maximum. supply voltage v s is 50v maximum. package type 18p4x circuit diagram the eight circuits share the v s and gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. unit: ?20 +75 operating temperature t opr ?55 +125 storage temperature t stg v ?0.5 +10 input voltage v i ma ? 500 current per circuit output, h output current i o w 1.79 ta = 25 , when mounted on board power dissipation p d v 50 clamping diode reverse voltage v r ma ? 500 clamping diode forward current i f v 50 supply voltage v s v ?0.5 +50 output , l collector-emitter voltage v ceo unit ratings conditions parameter symbol absolute maximum ratings (unless otherwise noted, ta = ?20 ~ +75 ) output input v s output input gnd 2 3 4 5 6 7 8 9 17 16 15 14 13 12 11 10 o2 o3 o4 o5 o6 o7 o8 in2 in3 in4 in5 in6 in7 in8 vs gnd 1 18 o1 in1 3k 20k 3k 1.5k 7.2k # : unused input pins must be connected to gnd. # #
mitsubishi semiconductors M54563WP 8-unit 500ma source type darlington transistor array with clamp diode jul-2011 2 duty cycle no more than 8% v 0.2 0 ?l? input voltage v il v 10 2.4 ?h? input voltage v ih ?100 0 duty cycle no more than 55% ma ?350 0 output current (current per 1 circuit when 8 circuits are coming on simultaneously) i o v 50 0 supply voltage v s max typ min unit limits parameter symbol recommended operating (unless otherwise noted, ta = ?20 ~ +75 ) ma 5.0 3.0 v i = 10v input current i i v ?2.4 ?1.35 i f = ? 350ma clamping diode forward voltage v f i o = ? 100ma i o = ? 350ma a 100 v r = 50v clamping diode reverse current i r ma 15.0 5.6 v s = 50v, v i = 3v(all input) supply current i s 1.0 0.6 v i = 3v 2.0 1.45 v 2.4 1.6 v s = 10v, v i = 2.4v collector-emitter saturation voltage v ce(sat) a 100 v s = 50v, v i = 0.2v supply leak current i s(leak) max typ min unit limits test conditions parameter symbol electrical characteristics (unless otherwise noted, ta = 20 75 * the typical values are those measured under ambient temperature (ta) of 25 . there is no guarantee that these valu es are obtained under any conditions. # : unused input pins must be connected to gnd. switching characteristics (unless otherwise noted, ta = 25 4800 turn-off time t off 100 c l = 15pf note 1 turn-on time t on max typ min unit limits test conditions parameter symbol note 1 test circuit timing diagram output input 50% 50% on 50% 50% off 50 c l r l pg input output measured device (1) pulse generator (pg) characteristics: prr = 1khz, tw = 10 s, tr = 6ns, tf = 6ns, z o = 50 ,v i = 0 to 2.4v (2) input-output conditions : r l = 30 , v s = 10v (3) electrostatic capacity cl includes floating capacitance at connections and input capacitance at probes v s # #
mitsubishi semiconductors M54563WP 8-unit 500ma source type darlington transistor array with clamp diode jul-2011 3 typical characteristics thermal derating factor characteristics ambient temperature ta( ) power dissipation p d (w) 0 25 50 75 100 0 0.5 1.0 1.5 2.0 output saturation voltage output current characteristics output saturation voltage v ce(sat) (v) collector current i c (ma) duty-cycle-output current characteristics duty cycle (%) output current i o (ma) duty cycle (%) output current i o (ma) 0 20 60 80 100 ?the collector current values represent the current per circuit. ?repeated frequency > 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?vcc=5v ?ta = 25 40 duty-cycle-output current characteristics output current i o (ma) grounded emitter transfer characteristics input voltage v i (v) M54563WP 0 0.5 1.0 1.5 2.0 0 2.5 ta=25 ta=-20 ta=75 -100 -200 -300 -500 -400 v s =10v v i =2.4v 0 20 60 80 100 0 -100 -200 -300 -500 40 -400 ?the collector current values represent the current per circuit. ?repeated frequency > 10hz ?the value in the circle represents the value of the simultaneously-operated circuit. ?vcc=5v ?ta = 75 -100 -200 -300 -500 -400 0 clamping diode characteristics forward bias voltage v f (v) 0 0.5 1.0 1.5 2.0 0 100 200 300 500 400 ta=25 ta=-20 ta=75 forward bias current i f (ma) 0 0.2 0.4 0.6 0.8 0 1.0 ta=25 ta=-20 ta=75 -100 -200 -300 -500 -400 v s =20v v s -v o =4v
mitsubishi semiconductors M54563WP 8-unit 500ma source type darlington transistor array with clamp diode jul-2011 4 input current i i( ma) input current i i (ma) input current characteristics input voltage v i (v) 012 45 0 0.2 0.6 0.8 1.0 3 input current characteristics input voltage v i (v) 024 810 0 1 2 4 5 6 ta=25 ta=-20 ta=75 v s =20v 3 v s =20v 0.4 ta=25 ta=-20 ta=75
mitsubishi semiconductors M54563WP 8-unit 500ma source type darlington transistor array with clamp diode jun-2011 5 package outline
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